Nano Science and Technology Institute
Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology

Chapter 14:

Process Modeling

-Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials
 N. Pirch, O. Baldus, R. Waser and E.W. Kreutz
 RWTH Aachen, DE
-The Level-Set Method for Modeling Epitaxial Growth
 C. Ratsch, M. Petersen and R.E. Caflisch
 University of California-Los Angeles, US
-Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method
 D. Wheeler, D. Josell and T.P. Moffat
 NIST, US
-A Physically-Based Model for Oxidation in a Circular Trench in Silicon
 Y. Xu, C. Sudhama, S. Hong, J.A. Sellers, S. Ambadi, K. Kamekona, G. Averett, B. Ruiz, I. Wan, W. Cai, Y. Wu, J.C. Costa and R.B. Davies
 ON Semiconductor, US
-Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation - Application to via Filling
 Y. Hiwatari, Y. Kaneko, K. Ohara and T. Murakami
 Kanazawa University, JP
-Gas Flow Simulation in a PECVD Reactor
 A.N.R. da Silva and N.I. Morimoto
 LSI – EPUSP, BR
-Rule Based Validation of Processing Sequences
 U. Hansen, C. Germer, S. Büttgenbach and H-J Franke
 TU Braunschweig, DE
-Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam
 H. Puchner, N. Eib, J. Kimball, M. Mirabedini, J. Haywood and S. Aronowitz
 Cypress Semiconductor, US
-The Numerical Simulation of a Substractive Process for the Fabrication of 3-D Low Temperature Co-Fired Ceramics Packaging Structures and Devices: Jet Vapor Etching
 I. Ramos, L. García, E.W. Simoes, R. Furlan, J.J. Santiago-Aviles and M.T. Pereira
 University of Puerto Rico at Humacao, US
-Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation
 F. Rábag, A. Mandelis and A. Salnik
 University of Toronto, CA
ISBN:0-9708275-6-3
Pages:504
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