Nano Science and Technology Institute
Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
 
Chapter 12: Molecular and Nanoelectronics
 

First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures

Authors:X. Zhang, L.R.C. Fonseca and A.A. Demkov
Affilation:Motorola Inc., US
Pages:322 - 325
Keywords:electron transport, scattering theory, density functional, aluminum, device physics, CMOS leakage
Abstract:We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method is then applied to the Si/SiO2/Si MOS structure, where we analyze the correspondence between the localized defect states and the leakage current. For a 1.04 nm thick MOS structure we calculate a leakage current of 33 A/cm2, in excellent agreement with a measured value of 19 A/cm2.
First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor StructuresView PDF of paper
ISBN:0-9708275-6-3
Pages:504
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