Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology

Molecular and Nanoelectronics Chapter 12

Molecular Control of the Drain Current in a Buried Channel MOSFET

Authors: J. Yang, L. de la Garza, T.J. Thornton, M. Kozicki and D. Gust

Affilation: Arizona State University, United States

Pages: 318 - 321

Keywords: SOI, electron transport, molecular electronics

Abstract:
We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately – 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 x 1011 cm-2 in the positive charge density located at the surface of the MOSFET.

Molecular Control of the Drain Current in a Buried Channel MOSFET

ISBN: 0-9708275-6-3
Pages: 504