Molecular Control of the Drain Current in a Buried Channel MOSFET

	Nanotech 2002 Vol. 2 Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology Chapter 12: Molecular and Nanoelectronics
	Molecular Control of the Drain Current in a Buried Channel MOSFET
Authors:	J. Yang, L. de la Garza, T.J. Thornton, M. Kozicki and D. Gust
Affilation:	Arizona State University, US
Pages:	318 - 321
Keywords:	SOI, electron transport, molecular electronics
Abstract:	We present results from a buried channel MOSFET with a molecular monolayer deposited on the surface. After attachment of the monolayer, the threshold voltage of the device shifts by approximately – 4.5 V. We explain this result in terms of an increase in the concentration of fixed positive charge at the upper Si:SiO2 interface due to protonation of the surface by the molecular monolayer. Numerical simulations of the device show that the observed shift in threshold voltage can be explained by an increase of 2.5 x 1011 cm-2 in the positive charge density located at the surface of the MOSFET.
	View PDF of paper
ISBN:	0-9708275-6-3
Pages:	504
Special:	3 CD Set — 15% off with Free Shipping
Up