Diffusion Mechanisms and Capture Radii in Silicon

	Nanotech 2002 Vol. 2 Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology Chapter 10: Nanoscale Modeling of Front-End Processing in Silicon
	Diffusion Mechanisms and Capture Radii in Silicon
Authors:	K. Beardmore, W. Windl, B.P. Haley and N. Gronbech-Jensen
Affilation:	Motorola, US
Pages:	251 - 254
Keywords:	silicon, diffusion, KLMC, ab initio, dopant
Abstract:	We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the VASP ab initio package. These potentials were then input into kinetic lattice Monte Carlo simulations in order to determine capture radii. We use and compare two Monte Carlo simulators, LAMOCA from Boston University and McMot, a code recently developed by ourselves. We find that capture radii are highly dependent upon the extent of the interaction allowed within the KLMC code. Calculated capture radii are considerably larger than those typically used in diffusion modeling.
	View PDF of paper
ISBN:	0-9708275-6-3
Pages:	504
Special:	3 CD Set — 15% off with Free Shipping
Up