 | Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Chapter 10: Nanoscale Modeling of Front-End Processing in Silicon |
Nanoworld Semiconductor Industry - State and Future Challenges of Technology Computer Aided Design | |
| Authors: | H. Puchner |
| Affilation: | Cypress Semiconductor, US |
| Pages: | 243 - 246 |
| Keywords: | high-k, plasma, nitridation, reactor-scale, feature-scale, kinetic Monte Carlo |
| Abstract: | Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory calculations used to investigate the scaling trends of high-k gate dielectrics. Since conventional as well as high-k dielectrics may still require a strong diffusion barrier against boron penetration we will present ab-initio quantum chemical calculations for the diffusion of boron within a thin gate oxide layer. Plasma-nitridation can be applied to alter the diffusion behavior of boron inside the gate oxide dielectric and to completely block boron penetration. We will present a detailed view on the nitridation mechanism and a combination of reactor-feature scale simulation in combination with Monte Carlo implantation simulations to describe the nitridatio process. Finally, kinetic Monte Carlo applications are presented for diffusion processes. |
 | View PDF of paper |
| ISBN: | 0-9708275-6-3 |
| Pages: | 504 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up |
© 2013 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map
Terms of Use | Privacy Policy | Contact Us | Site Map