Nanotech 2002 Vol. 2
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology

Nanoscale Modeling of Front-End Processing in Silicon Chapter 10

Nanoworld Semiconductor Industry - State and Future Challenges of Technology Computer Aided Design

Authors: H. Puchner

Affilation: Cypress Semiconductor, United States

Pages: 243 - 246

Keywords: high-k, plasma, nitridation, reactor-scale, feature-scale, kinetic Monte Carlo

Abstract:
Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory calculations used to investigate the scaling trends of high-k gate dielectrics. Since conventional as well as high-k dielectrics may still require a strong diffusion barrier against boron penetration we will present ab-initio quantum chemical calculations for the diffusion of boron within a thin gate oxide layer. Plasma-nitridation can be applied to alter the diffusion behavior of boron inside the gate oxide dielectric and to completely block boron penetration. We will present a detailed view on the nitridation mechanism and a combination of reactor-feature scale simulation in combination with Monte Carlo implantation simulations to describe the nitridatio process. Finally, kinetic Monte Carlo applications are presented for diffusion processes.

Nanoworld Semiconductor Industry - State and Future Challenges of Technology Computer Aided Design

ISBN: 0-9708275-6-3
Pages: 504