Nanoscale Modeling of Front-End Processing in Silicon

	Nanotech 2002 Vol. 2 Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology Chapter 10: Nanoscale Modeling of Front-End Processing in Silicon
-	Spatially Resolved Electron Energy-Loss Spectroscopy, a Tool to Verify Electronic Structure Calculations in Nanostructured Materials
	G. Duscher, J. Plitzko, C. Kisielowski, R. Buzko, S.J. Pennycook and S.T. Pantelides
	North Carolina State University, US
-	Nanoworld Semiconductor Industry - State and Future Challenges of Technology Computer Aided Design
	H. Puchner
	Cypress Semiconductor, US
-	Introducing Monte Carlo Diffusion Simulation into TCAD tools
	N. Strecker, V. Moroz and M. Jaraiz
	Avant!, US
-	Diffusion Mechanisms and Capture Radii in Silicon
	K. Beardmore, W. Windl, B.P. Haley and N. Gronbech-Jensen
	Motorola, US
-	Structural and Electronic Properties of Quantum Dot Surfaces
	G. Galli, A Puzder, A.J. Willilamson, J.C. Grossman and L. Pizzagalli
	Lawrence Livermore National Laboratory, US
ISBN:	0-9708275-6-3
Pages:	504
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