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 | Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
Chapter 5: Atomic and Nanoscale Modeling |
| | Ab Initio Modeling of Boron Clustering in Silicon | | Authors: | W. Windl, X-Y. Liu and M.P. Masquelier | | Affilation: | Motorola, U.S.A. | | Pages: | 112 - 116 | | Keywords: | ab initio, boron clustering, deactivation, multi-scale process modeling | | Abstract: | We present results of ab initio calculations for the structure and energetic of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the clusters and their possible relationship to boron precipitates and interstitial-cluster formation are discussed. Our continuum model suggests that inclusion of the fractional activation of charged clusters into the overall carrier count can make a substantial difference, if a sample contains a large fraction of B clustered in B3I- clusters, which might present a way to probe these clusters experimentally. |  | View paper | | ISBN: | 0-9708275-3-9 |
| Pages: | 218 |
| Hardcopy: | $100.00 |
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