Nano Science and Technology Institute
Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
 
Chapter 5: Atomic and Nanoscale Modeling
 

Boron Diffusion and Activation in Silicon in the Presence of Other Species

Authors:H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee
Affilation:Univ. of Texas Austin, US
Pages:108 - 111
Keywords:Boron, diffusion, activation, shallow junction, ab initio calculation
Abstract:Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.
Boron Diffusion and Activation in Silicon in the Presence of Other SpeciesView PDF of paper
ISBN:0-9708275-3-9
Pages:218
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map