Boron Diffusion and Activation in Silicon in the Presence of Other Species

	Nanotech 2001 Vol. 2 Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology Chapter 5: Atomic and Nanoscale Modeling
	Boron Diffusion and Activation in Silicon in the Presence of Other Species
Authors:	H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee
Affilation:	Univ. of Texas Austin, US
Pages:	108 - 111
Keywords:	Boron, diffusion, activation, shallow junction, ab initio calculation
Abstract:	Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.
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ISBN:	0-9708275-3-9
Pages:	218
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