Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology

Atomic and Nanoscale Modeling Chapter 5

Effect of Stress on Dopant Diffusion in Si

Authors: M.S. Daw, W. Windl and M. Laudon

Affilation: Clemson University, United States

Pages: 96 - 99

Keywords: defects, diffusion, pressure effects

Abstract:
We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to Jahn-Teller distorted vacancies in Si, which we predict to show isotropic diffusion for (100) grown uniaxially strained films, but strong anisotropic diffusion for (111) films.

Effect of Stress on Dopant Diffusion in Si

ISBN: 0-9708275-3-9
Pages: 218