Nano Science and Technology Institute
Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
 
Chapter 5: Atomic and Nanoscale Modeling
 

Effect of Stress on Dopant Diffusion in Si

Authors:M.S. Daw, W. Windl and M. Laudon
Affilation:Clemson University, US
Pages:96 - 99
Keywords:defects, diffusion, pressure effects
Abstract:We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to Jahn-Teller distorted vacancies in Si, which we predict to show isotropic diffusion for (100) grown uniaxially strained films, but strong anisotropic diffusion for (111) films.
Effect of Stress on Dopant Diffusion in SiView PDF of paper
ISBN:0-9708275-3-9
Pages:218
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