Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology

Atomic and Nanoscale Modeling Chapter 5

Effect of Stress on Dopant Diffusion in Si

Authors: M.S. Daw, W. Windl and M. Laudon

Affilation: Clemson University, United States

Pages: 96 - 99

Keywords: defects, diffusion, pressure effects

Abstract:
We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to Jahn-Teller distorted vacancies in Si, which we predict to show isotropic diffusion for (100) grown uniaxially strained films, but strong anisotropic diffusion for (111) films.


ISBN: 0-9708275-3-9
Pages: 218

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