Nano Science and Technology Institute
Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
Chapter 5: Atomic and Nanoscale Modeling

Effect of Stress on Dopant Diffusion in Si

Authors:M.S. Daw, W. Windl and M. Laudon
Affilation:Clemson University, US
Pages:96 - 99
Keywords:defects, diffusion, pressure effects
Abstract:We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to Jahn-Teller distorted vacancies in Si, which we predict to show isotropic diffusion for (100) grown uniaxially strained films, but strong anisotropic diffusion for (111) films.
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