 | Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
Chapter 5: Atomic and Nanoscale Modeling |
| - | Effect of Stress on Dopant Diffusion in Si |
| | M.S. Daw, W. Windl and M. Laudon |
| | Clemson University, U.S.A. |
| - | Atomistic Modeling of Arsenic Diffusion and Activation |
| | S. Dunham, P. Fastenko, Z. Qin and G. Henkelman |
| | University of Washington, U.S.A. |
| - | Theoretical Investigations of Diffusion and Clustering in Semiconductors |
| | B.P. Uberuaga, G. Henkelman, H. Jonsson, S.T. Dunham and W. Windl |
| | Los Alamos National Lab, U.S.A. |
| - | Boron Diffusion and Activation in Silicon in the Presence of Other Species |
| | H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee |
| | Univ. of Texas Austin, U.S.A. |
| - | Ab Initio Modeling of Boron Clustering in Silicon |
| | W. Windl, X-Y. Liu and M.P. Masquelier |
| | Motorola, U.S.A. |
| - | Thermodynamic Processes of Si-interstitial Clusters |
| | J. Kim, S. Birner, D.A. Richie, J.W. Wilkins, A.F. Voter |
| | Ohio State University, U.S.A. |
| ISBN: | 0-9708275-3-9 |
| Pages: | 218 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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