Atomic and Nanoscale Modeling

	Nanotech 2001 Vol. 2 Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology Chapter 5: Atomic and Nanoscale Modeling
-	Effect of Stress on Dopant Diffusion in Si
	M.S. Daw, W. Windl and M. Laudon
	Clemson University, US
-	Atomistic Modeling of Arsenic Diffusion and Activation
	S. Dunham, P. Fastenko, Z. Qin and G. Henkelman
	University of Washington, US
-	Theoretical Investigations of Diffusion and Clustering in Semiconductors
	B.P. Uberuaga, G. Henkelman, H. Jonsson, S.T. Dunham and W. Windl
	Los Alamos National Lab, US
-	Boron Diffusion and Activation in Silicon in the Presence of Other Species
	H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee
	Univ. of Texas Austin, US
-	Ab Initio Modeling of Boron Clustering in Silicon
	W. Windl, X-Y. Liu and M.P. Masquelier
	Motorola, US
-	Thermodynamic Processes of Si-interstitial Clusters
	J. Kim, S. Birner, D.A. Richie, J.W. Wilkins, A.F. Voter
	Ohio State University, US
ISBN:	0-9708275-3-9
Pages:	218
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