High-performance thin film boost for electronics research
Japanese researchers claim to develop world's highest performance thin-film capacitors
Story content courtesy of the International Center for Materials Nanoarchitectonics (MANA), National Institute Material Science, JP
The announcement of this breakthrough comes from a research group led by MANA Scientist Dr. Minoru Osada and Principal Investigator Dr. Takayoshi Sasaki of the International Center for Materials Nanoarchitectonics (MANA) at the National Institute for Material Science (NIMS) in Japan.
MANA researchers created the thin-film capacitors using a new high-permittivity (high-k) dielectric sheet with molecular-level thickness (~1 nm). This technology may revolutionize the next-generation electronics.
This latest research demonstrates simultaneous improvements in a number of material properties, including relative permittivity, lower loss and leakage current. The authors add, "The solution-based room-temperature process using oxide nanosheets as building blocks opens multiple possibilities for the development of high-k dielectrics in capacitor technology, gate insulators in organic field effect transistors, energy-storage devices, and also future flexible electronics."
