Nano Science and Technology Institute

IP Profile: Organic/hybrid Semiconductor

We have generated new semiconductors and insulators that can be used for low-voltage/high current transistors in which electrons are the current carriers, and which do not require ultrahigh vacuum for deposition.

Market: Electronics
Inventor: H. Katz, Johns Hopkins University, US
Organization: Johns Hopkins University, US
Technology Contact: E. Welden, Johns Hopkins Technology Transfer

Overview courtesy of H. Katz, Johns Hopkins University, US

In many cases, the materials can be deposited from solutions, which makes possible their patterning by printing methods. Printable electron-carrying transistors are important for complementary circuitry and are much less widely available than printable hole-carrying semiconductor devices. The new semiconductor materials include soluble and volatile organic ring compounds, and mixed sol-gel derived inorganic oxides. The dielectrics include layered ionic inorganic solids, also deposited from sol-gel precursors. In one case, the organic semiconductor actually supplies its own dielectric in the form of an attached side chain, potentially eliminating the need for the dielectric deposition step altogether and enabling switching below 1 volt. Another organic semiconductor is made from a surprisingly small ring system, making it more soluble and easier to tune for printing purposes.

Most recent advances include use of the new organic semiconductors on flexible, transparent polymer dielectrics with mobilities approaching 1 cm2/Vs, similar to amorphous silicon with low hysteresis, mixed oxide semiconductors with mobility near 30 cm2/Vs, and incorporation of the small-ring semiconductors into polymers. We are also developing methods of blending semiconductors with insulators.

We have interest from several corporations to further develop this technology. We have also approached federal agencies about developing the IP via a project grant.

Byung Jun Jung, Jia Sun, Taegweon Lee, Amy Sarjeant and Howard E. Katz*

Chem. Mater. 200X, XX, XXXX

Low Temperature-processible, Transparent, and Air-operable n-channel Fluorinated Phenylethylated Naphthalenetetracarboxylic Diimide Semiconductors Applied to Flexible Transistors

N,N9-bis(2-(pentafluorophenyl)ethyl)-1,4,5,8-naphthalene tetracarboxylic acid diimide (5FPE-NTCDI) showed high electron mobility, over 0.1 cm2/Vs in air, even though the film was deposited at room temperature. The thin film phase obtained at low Tsub was sufficient for electron transport. Stability to bending and low device hysteresis were demonstrated for transistors using poly(methyl methacrylate) as the gate dielectric.


Figure 1: Provisional Patent has been filed. Courtesy of Johns Hopkins University

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