The research team includes members from Friedrich-Alexander University Erlangen-Nuremberg, AG, and Swedish research institute Acreo AB. By adding hydrogen to their etching process, researchers change the way the silicon carbide crystal adheres to the graphene layer. The graphene used is new-enabled by silicon carbide-and also created by the European researchers. Their work could take us one step closer to ultra-fast, graphene transistors for semiconductors.
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