Nano Science and Technology Institute

Innovation Spotlight: 15 kV SiliconCarbide IGBTs

December 10, 2012 09:15 AM EST By: Susan Stewart

TechConnect Innovation Tracking: Cree, Inc., a TechConnect Accelerator participant-ARPA-E Energy Innovation Summit, 2012

High voltage, silcon-carbide (SiC) power electronics provide massive reduction in AC and HVDC Transmission and Distribution equipment size and weight. They also allow higher efficiency conversion.  Currently, breakdown voltage levels run between 10 &-12 kilovolts.

In a conversation with TechConnectNews, Mr. John Palmour, CTO of Cree Inc., reports that they have now achieved 17 kilovolts.  A system demo is currently being designed, and is expected to be completed in approximately 6 months. 

Mr. Palmour also tells us the company recently signed a program with the U.S. Army and Department of Defense to push to even higher voltages with SiC IGBTs. 

Cree has introduced the first commercially available all-SiC Cree┬« power modules.  The new high frequency module, rated at 100-A current handling and 1200-V blocking, provides higher efficiency, compact and lighter weight systems that the company believes can result in lower total system costs compared to conventional silicon-based technologies.

Visit http://www.cree.com to learn more about this company.

 

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