Nano Science and Technology Institute

Index of Keywords

[ ( | 0 | 1 | 2 | 3 | 4 | 5 | 6 | 8 | 9 | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | [ | Β | Γ | Ζ ]
[ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 ]
KeywordPaper title
MOSFETThe Use of a Green's Function Formalism for the Si…
 The Landauer Approach to the Critical Source-Chann…
 Simulation Study of Non-Quasi Static Behaviour of …
 A New Analytical Model of Channel Hot Electron (CH…
 The Use of a Green's Function Formalism for the Si…
 The Landauer Approach to the Critical Source-Chann…
 A Vertical MOSFET for Charge Sensing in the Convex…
 Single Transistor AND Gate
 Quantum and Kinetic Simulation Tools for Nano-scal…
 Noise Modeling with MOS Model 11 for RF-CMOS Appli…
 Substrate Current in Surface-Potential-Based Compa…
 A Surface-Potential-Based Compact Model of NMOSFET…
 Primary Consideration on Compact Modeling of DG MO…
 A Surface-Potential-Based Extrinsic Compact MOSFET…
 A Unified Environment for the Modeling of Ultra De…
 Accurate Modeling for RF Silicon MOSFET up to 15 G…
 Full-band Particle-based Simulation of Germanium-O…
 Self-Consistent Models of DC, AC, Noise and Mismat…
 Compact, Physics-Based Modeling of Nanoscale Limit…
 A Practical Method to Extract Extrinsic Parameters…
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map