Index of Keywords

effect of ambient atmosphere

Visible Light Emission from Si-related Nanostructures and the Effect of Ambient Atmosphere on Photoluminescence

effect of random dopant

Random Discrete Dopant Fluctuated Sub-32 nm FinFET Devices

effective channel doping

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

effective channel length

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs

Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s

Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio

effective diffusivity

Dispersion Modeling in Microfluidic Channels for System-level Optimization

effective drain-source voltage

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

effective drive current

Effective Drive Current in CMOS Inverters for Sub-45nm Technologies

effective mass approximation (EMA)

Nonparabolicity Effects of the Ultra-thin Body Double-gate MOSFETs

effective mechanical properties and responses

Closed form Exact Analytical Solutions for Effective Mechanical Properties and Responses for Nanotube Reinforced Nanocomposites

effective medium approximation

Static dielectric constant of SiO2 embedded with silicon nanocrystals

effective medium theory

Magnetic Properties over Several Length Scales: Micro-magnetic Modeling and Effective Medium Theory

effective mobility

Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime

Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials

effective potential

The Use of Bohm Trajectories and the Effective Potential in Probing Quantum Mechanical Behavior in 2-D and Spintronic Sub-micron Devices

Simulation and Validation of Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Quantum Effects in SOI Devices

The Use of Quantum Potentials for Confinement in Semiconductor Devices