Index of Authors

Vasileska, D.

3D Simulations of Ultra-Small MOSFETs: The Role of the Short Range Coulomb Interactions and Discrete Impurities on Device Terminal Characteristics

Efficient Poisson Equation Solvers for Large Scale 3D Simulations

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Quantum Effects in SOI Devices

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Quantum Effects in SOI Devices

Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Sub-Threshold Electron Mobility in SOI-MESFETs

Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures

Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)

Hole Transport Simulations in p-channel Si MOSFETs

Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures

Study of Cutoff Frequency Calculation in the Subthreshold Regime of Operation of the SOI - MESFETs

Self-consistent Quantum Mechanical Treatment of the Ballistic Transport in 10 nm FinFET Devices Using CBR Method

Study of the RF Characteristics features of Optimized SOI - MESFETs

Mobility of Electrons in Rectangular Si Nanowires

Optimization and Examination of Device Characteristics Due to Process Variation in 10 nm FinFET Using Fully Self-Consistent Quantum Mechanical Simulator

First self-consistent thermal electron- phonon simulator

Self – Heating Effects in Nanowire Transistors