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Author
Paper title
Sekigawa, T.
Device Parameter Extraction from Fabricated Double...
 
Capacitance Model for Four-Terminal DG MOSFETs
 
Transition Point Consideration for Velocity Satura...
 
Comparison of Four-terminal DG MOSFET Compact Mode...
 
Source/Drain Edge Modeling for DG MOSFET Compact M...
Sekioka, T.
Nanocrater Formation via Coulomb Explosion Initiat...
Sekiy, M.
Bridge a Gap between Nanotechnology R&D, Business ...
Sekiya, M.
Comprehensive Approach for Nanotechnology R&D and ...
Seksek, O.
New Multimodal Iron Oxide Nanoparticles as Nanotoo...
Selberherr, S.
Three-Dimensional Simulation of Bulge Formation in...
 
A Universal Low-Field Electron Mobility Model for ...
 
Numeric Aspects of the Simulation of Two-Dimension...
 
Accurate Three-Dimensional Simulation of Damage Ca...
 
A New Analytical Energy Relaxation Time Model for ...
 
Closed-Loop MOSFET Doping Profile Optimization for...
 
Automatic Device Design Optimization with TCAD Fra...
 
Inductance Calculation in Interconnect Structures
 
Transient Simulation of Ferroelectric Hysteresis
 
Variance Reduction in Monte Carlo Device Simulatio...
 
A Qualitative Study on Global and Local Optimizati...
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