Index of Affiliations

Peking University

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

An Approximate Explicit Solution to General Diode Equation

Numerical Analysis on Si-Ge Nanowire MOSFETs with Core-Shell Structure

A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs

Diode Parameter Extraction by a Linear Cofactor Difference Operation Method

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

PEKING University

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

Peking University

The Bipolar Field-Effect Transistor Theory (A. Summary of Recent Progresses)

peking university

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Peking University

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Analytic MOSFET Surface Potential Model with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

Vertically Aligned Carbon Nanotube Arrays assembled on Glassy Carbon electrode

Numerical Simulation on Nonlinear Response of Two-Dimensional Electron Plasmas in the Field Effect Transistor Structures

Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

Analytic Modeling of BioFET as a pH Sensor

Numerical Simulation on Nonlinear Response of Two-Dimensional Electron Plasmas in the Field Effect Transistor Structures

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel