Index of Affiliations

Nanyang Technological University

Instability in flatband votlage of SiO2 embedded with silicon nanocrystals

Interpretation of Anomalous Photoluminescence Peak in GaAs1-xNx Grown by Molecular Beam Epitaxy

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

Nonequilibrium molecular dynamics simulation for size effects on thermal conductivity of silicon nanostructures

Unified Compact Model for Generic Double-Gate MOSFETs

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

New Properties and New Challenges in MOS Compact Modeling

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum-Mechanical Effects

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping

Interface-trap Charges on Recombination DC Current-Voltage Characteristics in MOS transistors

A Technique for Constructing RTS Noise Model Based on Statistical Analysis

Yellow electroluminescence from sputtering synthesized aluminum nitride nanocomposite thin film containing aluminum nanocrystals

High dielectric tunability of Ba0.6Sr0.4TiO3 thin film deposited by radio-frequency sputtering

Interface Traps in Surface-Potential-Based MOSFET Models

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Compact Model Application to Statistical/Probabilistic Technology Variations

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs