Index of Affiliations

Hiroshima University

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

HiSIM: Accurate Charge Modeling Important for RF Era

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

RF-MOSFET Model Parameter Extraction with HiSIM

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

HiSIM: Accurate Charge Modeling Important for RF Era

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

The Si-tag for Immobilizing Proteins on a Silicon Device

Silylation Hardening for Mesoporous Silica Zeolite Film

Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization

Compact Model HiSIM-DG both for Symmetrical and Asymmetrical DG-MOSFET Structures

High-Voltage MOSFET Model Valid for Device Optimization

Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type

HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics

Modeling of the impurity-gradient effect in high-voltage MOSFETs

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow