NSTI Nanotech 2009

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

X. Zhou, J. Zhang, L. Zhang, C. Ma, J. He, M. Chan
peking university, CN

Keywords: nanoscale device, non-classical MOSFETs, DG-MOSFETs, modeling and simulation

Abstract:

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model predicts different DG MOSEET operation modes and the characteristics, which are well verified by the 2-D numerical simulator in different cases. We also analyze the model limitation and further improved direction.
 
Program | Tracks | Symposia | Workshops | Exhibitor | Press |
Venue | News | Subscribe | Contact | Site Map
© Copyright 2008 Nano Science and Technology Institute. All Rights Reserved.