NSTI Nanotech 2009

Detailed Analysis of Quantum-Effects in Nanowire Tunneling Transistors with Different Channel-Profiles

A. Heigl, G. Wachutka
TU Munich, DE

Keywords: tunneling transistor, device simulation, multigate, quantum-confinement

Abstract:

Combining the operational principle of the tunneling field effect transistor with the idea of a multigate channel control appears as an attractive option to avoid unwanted shortchannel effects in nanometer-scale MOS-devices. This motivated us to investigate the operational behavior of cylindrical and rectangular nanowire tunneling transistors in more detail, in particular the effect of quantum confinement on the device characteristics. Specifically, we focused on potential device improvements by considering alternative materials for the gate-stack and the impact of different nanowire cross-sections on the performance.
 
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