NSTI Nanotech 2009

High Sensitivity Electromechanical Sensor based on ZnO Nanowire FET on Flexible Substrate

S. Hur, k.H. Lee, Y.B. Han
Korea Institute of Machnery & Materials, KR

Keywords: ZnO nanowire, FET, Electromechanical sensor

Abstract:

Electromechanical sensors based on individual ZnO nanowires have been fabricated by a simple, reliable, and cost-effective technique. The electromechanical sensor device consists of a field effect transistor(FET) that is placed on the upper surface of a flexible substrate and bonded at its two ends. The FET sensor has Schottky contacts at its two ends. The I-V characteristic is highly sensitive to strain mainly due to the change in Schottky barrier height (SBH). The change in SBH is suggested owing to the strain induced band structure change and piezoelectric effect. We perform a sensitivity measurement of piezoelectric FET nanowire sensor as a functions of temperature and humidity. The electromechanical sensor developed here has applications in strain and stress measurements in cell biology, biomedical sciences, MEMS devices, structure monitoring, and more.
 
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