Transient Behavior of Integrated Carbon Nanotube Field Effect Transistor Circuits
Y. Xu, A. Srivastava, Jo.M. Marulanda
Louisiana State University, Baton Rouge, US
Keywords: CNT-FET, CNT Interconnects, CNT-FET Modeling
Abstract:In this paper, a semi-classical one-dimensional electron fluid model for carbon nanotube interconnects is built which is based on a classical two-dimensional electron fluid theory taking into account electron-electron repulsive forces, which are significant in one-dimensional system. We have used one-dimensional fluid model to characterize the carbon nanotube (CNT) as interconnects, built a transmission line model and studied the performance of CNT interconnects and explored the possibility of its application for next generation VLSI chips. By combining our CNT interconnect model and the CNT-FET model we have studied the performance of an all CNT-FET inverter pair and a ring oscillator circuit realized from the inverter. Study of the all CNT based integrated circuits (including CNT-FETs and CNT interconnects) shows that CNT-FET circuits can operate in very high frequencies regime and the carbon nanotube interconnections are able to provide enough bandwidth for GHz operation of CNT-FET circuits. In addition, by simulation and comparing with experiments results, we conclude that scaling the length of CNT-FETs can increase the operational frequency of the CNT-FET circuits.