NSTI Nanotech 2009

Quantum Dot Gate InGaAs FETs

F. Jain, F. Alamoody, E. Suarez, M. Gogna, P-Y. Chan, S. Karmakar, J. Fikiet, B. Miller, E. Heller
University of Connecticut, US

Keywords: quantum dot, FET, InGaAs

Abstract:

This paper illustrates on using II-VI material as a high-k gate dielectric in a InGaAs FET. It also shows how cladded dots are used in FET which shows a 3-state behaviour or nonvolatile memory.
 
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