NSTI Nanotech 2009

Deposition of beta-SiC thin films on Si (100) substrates by MOCVD method for NSOM applications

S-H Nam, M-H Kim, J-S Hyun, J-H Boo
Sungkyunkwan University, KR

Keywords: SiC, NSOM, cantilever, MOCVD method

Abstract:

Silicon carbide thin films were deposited on Si(100) substrates by metal-organic chemical vapor deposition(MOCVD) in high vacuum condition(2.010-7 Torr) using 1,3-disilabutane as a single source precursor which contains silicon and carbide in 1:1 ratio at various temperature in the range of 700~1000℃. Also, silicon carbide thin films were deposited on Si (100) substrate at deposition pressure between 5.010-6 Torr and 1.010-6 Torr without carrier and bubble gas. The XPS result shows that the SiC thin film grown at 950℃ which have carbon rich for silicon and carbon at 1:1.2 ratios. XRD result shows that the SiC thin film grown at 900℃ which appeared at 2 = 41.6 for SiC (200) reflection at a large intensity and a single shape diffraction peck. SEM images result show that the SiC thin film grown at 900℃ which has influence on the small grain size and single crystallinity. AFM images result show that the SiC thin film has smooth surface at RMS = 20nm. In this paper, we fabricated the small aperture for the better performance such as less noise, higher resonant frequencies and fast imaging. We will apply that silicon carbide thin film has smooth surface on NSOM application. Therefore, based on experimental results from X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscope (AFM) the best epitaxial SiC thin films were grown at 900℃ and 2.010-6 Torr.
 
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