Self-organized nanostructures on semiconductor surfaces by low-energy ion beam erosion

M. Cornejo, B. Ziberi, J. Völlner, F. Frost, B. Rauschenbach
Leibniz-Institute of Surface Modification, DE

Keywords: self-organization, maskless patterning, ion beam

Abstract:

Ion beam erosion is an alternative process for the generation of various nanostructured surfaces or interfaces via self-organization. In contrast to advanced lithographic methods and subsequent etching procedures for pattern production with structure sizes < 200 nm, which are complex technological processes, self-organized spontaneous pattern formation on the nanometer scale, as observed in erosion of surfaces by ion bombardment, is a cost-efficient `bottom up` approach for the fabrication of nanostructures. With suitable broad beam ion sources, large-area surface processing is possible. In this work results for pattern formation due to noble gas ion beam erosion of silicon, germanium and III/V semiconductor surfaces are presented.