NSTI Nanotech 2009

Full-Band and Atomistic Modeling of Nanoelectronic Devices

M. Luisier, G. Klimeck
Network for Computational Nanotechnology, Purdue University, US

Keywords: simulation, full-band, atomistic quantum transport

Abstract:

Technology computer aided design is widely recognized by the semiconductor industry as an indispensable tool to facilitate and accelerate the development of novel transistor structures. The constant miniaturization of the device size has led to gate lengths and active regions with nanoscale dimensions and a countable number of atoms. Classical simulation approaches can no more capture the strong quantization of the electrons and holes and need to be replaced by methods based on quantum mechanics. Using OMEN the full-band and atomistic quantum transport simulator we have developed we are able to investigate next generation nanoelectronic devices like double-gate ultra-thin-body, gate-all-around nanowire, or band-to-band tunneling transistors and obtain good agreement with experimental data.
 
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