Ambipolar Transport in Si-Nanowire Transistors
W.M. Weber, L. Geelhaar, F. Kreupl, E. Unger, H. Riechert, G. Scarpa, P. Lugli
Technische Universitaet Muenchen, DE
Keywords: silicon nanowires, nanodevices, transport
Abstract:Silicon nanowires (NW) are a possible candidate for post-CMOS applications. Ultimately, p- and n-type field effect transistors (FET) are essential to enable logic operations with low power consumption. Nevertheless, the controlled doping during the NW synthesis is still an unsolved problem. We present a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts. This simple method provides the possibility to create complementary logic circuits without the use of doping.