NSTI Nanotech 2009

High-Voltage MOSFET Model Valid for Device Optimization

Y. Oritsuki, T. Sakuda, N. Sadachika, M. Miyake, T. Kajiwara, H. Kikuchihara U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Hiroshima University, JP

Keywords: surface potential based, LDMOS, compact model

Abstract:

Market for power devices are expanding due to the global warming problem. It is expected that the power devices play an important role for stopping the problem. For this purpose accurate compact models are highly required and we developed HiSIM_HV. HiSIM_HV is the high-voltage MOSFET model based on the complete surface-potential-based concept. The specific features of power MOSFETs are caused by a high resistive region, called drift region. The device parameters, which determine the resistance in the drift region, are the length and the impurity concentration. In HiSIM_HV the resistance effect is solved iteratively. Due to the model consistency the features are well reproduced. Here we extend the model to be applicable even for device optimization.
 
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