NSTI Nanotech 2009

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

U. Monga, T.A. Fjeldly
Norwegian University of Science and Technology, NO

Keywords: quantum effects, device modeling, nanoscale MOSFET, double-gate device, conformal mapping

Abstract:

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge can be neglected in Poisson’s equation, thus decoupling the quantum effects and the electrostatics in the body. The potential in subthreshold is obtained as a solution of the 2-D Laplace equation with the help of conformal mapping techniques
 
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