NSTI Nanotech 2009

SPICE BSIM3 Model Parameters Extraction and Optimization for Low Temperature Application

H. Abebe, V. Tyree, N.S. Cockerham
USC ISI/MOSIS, US

Keywords: device modeling, MOSFET, parameter extraction, SPICE

Abstract:

The SPICE BSIM3v3.1 model parameters extraction and optimization strategy that we present here is applicable for a half micron technology and circuits operating at temperature ranging from -191 to 125 0C. The room temperature extraction and optimization strategy [1] is used as basis to extract the temperature dependent BSIM3v3.1 model parameters. The final extracted model parameters accuracy is evaluated by comparing simulations of a 31-stage ring oscillator with measured data.
 
Program | Tracks | Symposia | Workshops | Exhibitor | Press |
Venue | News | Subscribe | Contact | Site Map
© Copyright 2008 Nano Science and Technology Institute. All Rights Reserved.