NSTI Nanotech 2009

(CANCELED) Double Gated Silicon Nanowire Field Effect Transistors as Charge Detection Based Bio and Chemical Sensors

J.M. Kivioja, A. Colli, M.J.A. Bailey, T. Ryhänen
Nokia Research Center, UK

Keywords: nanowire FET, double gate FET, silicon nanowire, biosensor

Abstract:

Double gated silicon nanowires are promising candidates for sensing purposes. In this work DG-SiNWs were studied both experimentally and by simulations. Our results confirm that the top-gate could indeed be used to tune charge distribution along the wire even in relatively narrow ~10 nm diameter nanowires. This property could potentially be used to enhance the sensitivity and the dynamic range of nanowire based bio and chemical sensors.
 
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