(CANCELED) Double Gated Silicon Nanowire Field Effect Transistors as Charge Detection Based Bio and Chemical Sensors

J.M. Kivioja, A. Colli, M.J.A. Bailey, T. Ryhänen
Nokia Research Center, UK

Keywords: nanowire FET, double gate FET, silicon nanowire, biosensor

Abstract:

Double gated silicon nanowires are promising candidates for sensing purposes. In this work DG-SiNWs were studied both experimentally and by simulations. Our results confirm that the top-gate could indeed be used to tune charge distribution along the wire even in relatively narrow ~10 nm diameter nanowires. This property could potentially be used to enhance the sensitivity and the dynamic range of nanowire based bio and chemical sensors.