NSTI Nanotech 2009

Fabrication of nanogap-based field effect transistor using nanoimprint lithography

J. Lee, M.-C. An, K.-D. Kim, J.-H. Jeong, J.-H. Ahn, Y.K. Choi
Korea Institute of Machinery and Materials, US

Keywords: nanogap, field effect transistor, nanoimprint

Abstract:

We report CMOS-compatible fabrication of nanogap-based field effect transistor using nanoimprint lithography. Electrical characteristic is measured to confirm field effect characteristic of the fabricated device. When nanoparticles are incorporated into nanogap, field effect is changed because of change of nanogap dielectric. The fabricated device is expected to be applied as biosensor for detection of chemical and biological species.
 
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