PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

C. D’Agostino, P. Flatresse, E. Beigne, M. Belleville
STMicroelectronics, FR

Keywords: Statistical, Variability, PSP, CMOS

Abstract:

A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of the leakage current of a complete digital circuit, without using time consuming Monte-Carlo simulations. The methodology consists mainly in the integration of probability equations directly into the PSP model