A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET
C. Ma, B. Li, L. Zhang, J. He, X. Zhang, X. Lin
Peking University, CN
Keywords: reliability, HCI, model, mobility, Nanoscale FinFET
Abstract:A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. It is concluded that in the depletion and weak reverse region, the degradation of carrier mobility is the dominant impact on the current decrease; in the strong inversion region, the current decrease is determined by the loss of inversion charges trapped in the interface states. With the analysis, a compact HCI model for Nanoscale FinFET is derived and validated in both forward and reverse operation mode. The simulation result agrees very well with the measured data.