2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

Solution-Phase Reaction Synthesis of InP Nanocrystals

J. Qi, A.M. Belcher
Massachusetts Institute of Technology, US

Keywords:
InP nanocrystals, semiconductor-liquid junction

Abstract:
Solution-Phase Reaction Synthesis of InP Nanocrystals Jifa Qi and Angela M. Belcher Department of Materials Science and Engineering and Biological Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 Semiconductor nanocrystals with particle sizes of typically less than 10 nm possess various unique properties originating from the quantum confinement effect. While II-VI semiconductor nanocrystals were studied extensively during the last decade, much less information is available about their III-V analogous. The synthesis of colloidal III-V nanocrystals is more difficult than that of II-VI nanocrystals. Despite the difficulties in preparation, the III–V nano-materials seem the ideal candidates in which to examine size quantization effects, as the excitonic Bohr radius is much larger than analogous II–VI compounds. Another potential interest in III-V nanocrystals is based on the view of “green chemical principles” towards to the environmentally benign chemical methodologies and materials, some III-V compounds (e.g. GaN, InP) are more attractive than the cadmium-related compounds from this point. InP nanocrystal materials was one of most studied III-V semiconductors which successfully synthesized by several groups through the dehalosylilation reaction. In this research, InP nanocrystals with diameters ranging from 2-8 nm were synthesized as well-crystallized nanoparticles with zinc blende structure. The synthesis is achieved by dehalosilylation reactions, heating precursors of indium salts and tris(trimethylsilyl)phosphine (P(SiMe3)3) at temperatures ranging from 300-400oC in the presence of a colloidal stabilizer, trioctylphosphine (TOP), to yield nanocrystals. The InP nanocrystals were characterized by TEM, AFM, powder X-ray diffraction, optical absorption and photoluminescence spectroscopy. InP nanocrystals was placed on different conducting substrates (Au, Si) formed thin film of InP nanocrystals with the thickness of 100 nm to 1500 nm. The photovoltaic device of InP nanocrystals/liquid junction was investigated.


Nanotech 2008 Conference Program Abstract