Improved layout dependent modeling of the base resistance in advanced HBTs
S. Lehmann, M. Schroter
University of Technology Dresden, DE
bipolar transistor, SiGe HBT, base resistance, compact modeling
Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.
Nanotech 2008 Conference Program Abstract