2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Improved layout dependent modeling of the base resistance in advanced HBTs

S. Lehmann, M. Schroter
University of Technology Dresden, DE

Keywords:
bipolar transistor, SiGe HBT, base resistance, compact modeling

Abstract:
Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.


Nanotech 2008 Conference Program Abstract