2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Improved layout dependent modeling of the base resistance in advanced HBTs

S. Lehmann, M. Schroter
University of Technology Dresden, DE

bipolar transistor, SiGe HBT, base resistance, compact modeling

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.

Nanotech 2008 Conference Program Abstract