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Nano-gap high quality factor thin film SOI MEM resonators
D. Grogg, C.H. Tekin, D.N. Badila-Ciressan, D. Tsamados, M. Mazza, M.A. Ionescu Ecole Polytechnique Fédérale de Lausanne, CH
Keywords: microelectromechanical systems, MEMS, electrostatic devices, resonators, quality factor (Q)
Abstract: A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of 55 k is measured at 18 V DC polarization and values still below 100 k can be measured at 14 V.
Nanotech 2008 Conference Program Abstract
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