2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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TechConnect Summit
Clean Technology 2008

JUNCAP2 Express: an extremely efficient evaluation of the JUNCAP2 model

G.D.J. Smit, A.J. Scholten, D.B.M. Klaassen
NXP Semiconductors, NL

Keywords:
MOSFET, junctions, JUNCAP2

Abstract:
Advanced CMOS process technologies involve heavy pocket implants to control the off-state source-drain current. These heavy pocket implants lead to source-body and drain-body junctions with very steep doping profiles, and high electrical fields. This implies that besides the conventional SRH current also tunnelling mechanisms (trap-assisted-tunnelling, band-to-band tunnelling) play an important role. All these mechanisms are accurately described by the JUNCAP2 model for junction diodes (see TED, vol. 53, no. 9, pp. 2098-2107, 2006). However, due to three geometrical contributions (bottom area, gate edge, isolation edge), there are in fact six diodes involved in one single MOSFET. Consequently, the sophisticated equations of JUNCAP2 have to be evaluated six times. For some applications this may lead to too long runtimes during circuits simulations. In this paper we describe a mapping of the full JUNCAP2 model on only three exponentials without any serious penalty in accuracy. The effects on runtime during circuit simulation are also discussed.


Nanotech 2008 Conference Program Abstract