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Modeling of PN Diode Based Phase-Change Memory Access Circuit
M. Chan, K. Lu, T.D. Happ, B. Rajendran, H-L Lung, C. Lam
HKUST, HK
Keywords:
phase-change memory, PCM, PN diode
Abstract:
An analytic model is developed predict the performance of Phase-Change Memory (PCM) array with PN diodes as access devices. The model includes non-uniform current flow in the buried contact layer, injection current to the substrate and disturb current to neighboring cells. The model is verified by extensive 3-D numerical simulations. Based on the model, the impact of various geometrical parameters on the memory array performance can be predicted before actual fabrications.
Nanotech 2008 Conference Program Abstract
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