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Numerical Analysis on Si-Ge Nanowire MOSFETs with Core-Shell Structure
Y. Fu, J. He, F. Liu, L. Zhang, J. Feng, C. Ma
Peking University, CN
Keywords:
non-classical MOSFETs, device physics, compact modeling, nanoscale MOSFET with core-shell structure
Abstract:
This paper investigates the transport properties of the silicon/Germanium nanowire MOSFETs with core-shell structure by a numerical method. Coupling Poisson’s equation to Schrödinger’s equation for electrostatics calculation, and electron structure to current transport equation for channel current computation, the electronic structure, quantized energy levels, relevant wave functions and charge distribution are solved self-consistently by a finite numerical method. Based on these findings, the transistor performances, including the capacitance characteristics and drain current, are further predicted.
Nanotech 2008 Conference Program Abstract
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