2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

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Clean Technology 2008

Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

V. Hariharan, R. Thakker, M.B. Patil, J. Vasi, V.R. Rao
IIT Bombay, IN

Keywords:
double-gate, mosfet, model, mobility, saturation, doping, vertical-field

Abstract:
In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility degradation, lateral field mobility degradation and body doping, and that is valid in sub-threshold as well as above-threshold. The key novelty in this work is that the physical model for velocity saturation has been retained as an integral part of the model derivation, as opposed to adding its effect on the mobility at the end by considering an averaged electric field.


Nanotech 2008 Conference Program Abstract