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Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools
R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta
Semiconductor Devices Research Laboratory, IN
Keywords:
ATLAS, concave, DMG, intrinsic delay, RF, stability
Abstract:
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower intrinsic delay pertained by L-DUMGAC architecture strengthens the idea of using it for switching applications, thereby giving a new opening for high frequency wireless communications. Thus, L-DUMGAC MOSFET design acts as an attractive solution for the ongoing integration process for LNA design and RF applications below the 65-nm technology node.
Nanotech 2008 Conference Program Abstract
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