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Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET
R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta
University of Delhi, IN
Keywords:
ATLAS, DMG, MOSFET, modeling
Abstract:
In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual material gate (DMG) architecture. It has been seen that MLGEWE-RC MOSFET exhibits significant enhancement in terms improved gate controllability over the channel, carrier transport efficiency and hence, the driving current and hot carrier effect immunity. Thus, MLGEWE-RC MOSFET design acts as an attractive solution for the ongoing integration process in analog design and high-speed integration circuits below the 65-nm technology node.
Nanotech 2008 Conference Program Abstract
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