Controllable sub-100nm magnetic multilayer devices via stencil mask technique
J.Y. Ou, M.Y. Kao, L. Horng, J.C. Wu
National Changhua University of Education, TW
stencil mask, spin valve, phase changed memory
A fabrication process for fabricating controllable sub-100nm magnetic multilayer devices is demonstrated by using a novel stencil mask technique. Stack of multilayer devices with diameter in nanometer scales were successfully made through a template of Ge/SiO2 stencil mask having very well undercutting profile of SiO2 insulating layer. The function of using this method is that a device with diameter below 100 nm can be made through a twice larger Ge hole of stencil mask. The desired dimension of the active device layers was achieved with a thick buffer metal layer deposited first, giving rise to a narrower neck for later active layers deposition. Moreover, this stencil mask technique can be utilized as device templates of not only magnetic multilayer devices but also other nano-sized devices such as phase changed memory devices.
Nanotech 2008 Conference Program Abstract