2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Nantero’s Microelectronic Grade Carbon Nanotube Formulation for Memory (NRAM™) and Other Applications

R. Sen
Nantero, Inc., US

Keywords:
carbon nanotubes, memory, microelectronics

Abstract:
After their discovery in 1991, the properties of carbon nanotubes (CNTs) were investigated by academic and corporate research groups around the world. The results, both measured and modeled, led scientists to envision a myriad of applications. In 2001 Nantero was incorporated with the goal of developing a universal memory, NRAM™, using CNTs as the switching element. NRAM incorporates all the positive attributes of currently available memory chips such as DRAM, SRAM and Flash. To enable development and production of the CNT-based memory, Nantero had to envision and implement a process which used the existing tools in production fabs. Towards this goal, Nantero was successful in developing a CNT-based liquid formulation that meets microelectronics industry requirements such as high purity, stability and consistency. The formulation was qualified for use in two production fabs, and was integrated with other materials and tools to develop NRAM prototypes. This presentation will introduce the properties of the microelectronics grade CNT formulation developed by Nantero. It will describe the characterization methods and processes used to integrate the CNTs in the manufacturing fab. Existing and potential products that can be developed using Nantero’s CNT formulation will also be discussed.


Nanotech 2008 Conference Program Abstract