2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina
Global TCAD Solutions, AT

Keywords:
MOSFETs, TCAD, Numerical device simulation

Abstract:
An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented.


Nanotech 2008 Conference Program Abstract