2008 NSTI Nanotechnology Conference and Trade Show - Nanotech 2008 - 11th Annual

Partnering Events:

TechConnect Summit
Clean Technology 2008

UV-NIL with optimal droplets

V. Sirotkin, A. Svintsov, S. Zaitsev
IMT RAS, RU

Keywords:
step/flash nanoimprint lithography, optimal dispensing

Abstract:
A homogeneous residual layer thickness in nanoimprint lithography (NIL) is a serious problem in step and flash (UV-)NIL. Improvement of thickness homogeneity could be expected from optimized size of droplets at resist dispensing in case of UV-NIL. The optimization in droplet size must exclude the stamp geometry involving areas in which the resist has to flow laterally over large distances so stamp geometry should be considered at optimization. Also the optimization should consider process of resist wetting and spreading at imprint analyzing resist viscous flow. The report is devoted to development of an optimizing algorithm, which take into account only filling factor (geometry) of a stamp and does not consider the following resist flow. In current realization of the approach a specially developed algorithm transfers stamp geometry defined in standard GDSII (or ACAD) format into rectangular (square) cells and calculates the filling factors taking into consideration stamp depth and desirable residual resist thickness. Then depending of the jet model continuous or discreet volume is calculated and saved for further use by control system of a UV-NIL machine.


Nanotech 2008 Conference Program Abstract